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FMMT596TA

FMMT596TA

FMMT596TA

Diodes Incorporated

FMMT596TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

FMMT596TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Voltage - Rated DC -200V
Max Power Dissipation500mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-500mA
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number FMMT596
Number of Elements 1
Voltage 200V
Element ConfigurationSingle
Current 3A
Power Dissipation500mW
Transistor Application SWITCHING
Gain Bandwidth Product150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 250mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 250mA
Collector Emitter Breakdown Voltage200V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage-350mV
Max Breakdown Voltage 200V
Collector Base Voltage (VCBO) 220V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current -300mA
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:20211 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.244896$0.244896
10$0.231034$2.31034
100$0.217957$21.7957
500$0.205619$102.8095
1000$0.193981$193.981

FMMT596TA Product Details

FMMT596TA Overview


In this device, the DC current gain is 85 @ 250mA 10V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -350mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 25mA, 250mA.Single BJT transistor is recommended to keep the continuous collector voltage at -300mA in order to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.Parts of this part have transition frequencies of 150MHz.An input voltage of 200V volts is the breakdown voltage.When collector current reaches its maximum, it can reach 300mA volts.

FMMT596TA Features


the DC current gain for this device is 85 @ 250mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 25mA, 250mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 150MHz

FMMT596TA Applications


There are a lot of Diodes Incorporated FMMT596TA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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