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DXTP560BP5-13

DXTP560BP5-13

DXTP560BP5-13

Diodes Incorporated

DXTP560BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXTP560BP5-13 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerDI™ 5
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation2.8W
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DXTP560
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Power - Max 2.8W
Transistor Application SWITCHING
Gain Bandwidth Product60MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 50mA
Collector Emitter Breakdown Voltage500V
Transition Frequency 60MHz
Collector Emitter Saturation Voltage-200mV
Max Breakdown Voltage 500V
Collector Base Voltage (VCBO) -500V
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -150mA
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:9772 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.917112$0.917112
10$0.865200$8.652
100$0.816226$81.6226
500$0.770025$385.0125
1000$0.726439$726.439

DXTP560BP5-13 Product Details

DXTP560BP5-13 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 80 @ 50mA 10V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 10mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -150mA to achieve high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.A transition frequency of 60MHz is present in the part.Input voltage breakdown is available at 500V volts.A maximum collector current of 150mA volts is possible.

DXTP560BP5-13 Features


the DC current gain for this device is 80 @ 50mA 10V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 10mA, 50mA
the emitter base voltage is kept at -7V
a transition frequency of 60MHz

DXTP560BP5-13 Applications


There are a lot of Diodes Incorporated DXTP560BP5-13 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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