PBSS2540M,315 Overview
DC current gain in this device equals 150 @ 100mA 2V, which is the ratio of the base current to the collector current.When VCE saturation is 250mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 6V to gain high efficiency.Parts of this part have transition frequencies of 450MHz.Breakdown input voltage is 40V volts.Collector current can be as low as 500mA volts at its maximum.
PBSS2540M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 450MHz
PBSS2540M,315 Applications
There are a lot of Nexperia USA Inc. PBSS2540M,315 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
