ZXT11N20DFTA Overview
In this device, the DC current gain is 300 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 90mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 130mV @ 250mA, 2.5A.Continuous collector voltage should be kept at 2.5A for high efficiency.An emitter's base voltage can be kept at 7.5V to gain high efficiency.This device has a current rating of 2.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 160MHz.Breakdown input voltage is 20V volts.A maximum collector current of 2.5A volts can be achieved.
ZXT11N20DFTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 130mV @ 250mA, 2.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is 2.5A
a transition frequency of 160MHz
ZXT11N20DFTA Applications
There are a lot of Diodes Incorporated ZXT11N20DFTA applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
