Name: SPN01N60C3
Brand: Infineon Technologies
SKU: SPN01N60C3
Availability: InStock

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SPN01N60C3

Manufacturer part number:SPN01N60C3

Manufacturer:Infineon Technologies

Description:SPN01N60C3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SPN01N60C3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	CoolMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	650V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Current Rating	300mA
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300mA Ta
Gate Charge (Qg) (Max) @ Vgs	5nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	60 ns
Continuous Drain Current (ID)	300mA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	6Ohm
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	1.6A
Nominal Vgs	3 V
RoHS Status	Non-RoHS Compliant
Lead Free	Lead Free

SPN01N60C3 Product Details

SPN01N60C3 Description

SPN01N60C3 is a Cool MOS? Power Transistor manufactured by Infineon Technologies. The Infineon SPN01N60C3 is with the features of New revolutionary high voltage technology, Ultra low gate charge, Extreme dv/dt rated, Ultra-low effective capacitances, and Improved transconductance. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor SPN01N60C3 is in the SOT-223 package with 1.8w power dissipation.