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SPD09P06PL

  • SPD09P06PL - SPD09P06PL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
  • SPD09P06PL - SPD09P06PL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SPD09P06PL

SPD09P06PL

Infineon Technologies

SPD09P06PL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPD09P06PL Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2001
Series SIPMOS®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-9.7A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 42W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation42W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.7A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time168ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 89 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 9.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 38.8A
Avalanche Energy Rating (Eas) 70 mJ
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4367 items

SPD09P06PL Product Details

SPD09P06PL Description


The Infineon Technologies SPD09P06PL is a P-Channel SIPMOS Power-Transistor.



SPD09P06PL Features


  • P-Channel

  • Enhancement mode

  • Logic Level

  • 175°C operating temperature

  • Avalanche rated

  • dv/dt rated



SPD09P06PL Application


  • Industrial


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