HGTP7N60B3D Description
MOS gated high voltage switching devices like the HGTP7N60B3D combine the greatest features of MOSFETs and bipolar transistors. These devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. At rated current, the substantially lower on-state voltage drop fluctuates only marginally between 25oC and 150oC. TA49190 is the developmental type of the IGBT.
HGTP7N60B3D Features
?Ratio of Short Circuits
?Low Loss Conductivity
?An ti-Parallel Hyperfast Diode
HGTP7N60B3D Applications
Controls for AC and DC motors
energy sources
solenoid controllers
Contactors and relays are two types of contactors.
