BDP947H6327XTSA1 Overview
DC current gain in this device equals 100 @ 500mA 1V, which is the ratio of the base current to the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.The maximum collector current is 3A volts.
BDP947H6327XTSA1 Features
the DC current gain for this device is 100 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BDP947H6327XTSA1 Applications
There are a lot of Infineon Technologies BDP947H6327XTSA1 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
