ZXTP19100CZTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.As it features a collector emitter saturation voltage of -220mV, it allows for maximum design flexibility.When VCE saturation is 295mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at -7V to gain high efficiency.In the part, the transition frequency is 142MHz.This device can take an input voltage of 100V volts before it breaks down.In extreme cases, the collector current can be as low as 2A volts.
ZXTP19100CZTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 295mV @ 200mA, 2A
the emitter base voltage is kept at -7V
a transition frequency of 142MHz
ZXTP19100CZTA Applications
There are a lot of Diodes Incorporated ZXTP19100CZTA applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
