12A02MH-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 10mA 2V.With a collector emitter saturation voltage of -240mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 5V, an efficient operation can be achieved.A breakdown input voltage of 12V volts can be used.During maximum operation, collector current can be as low as 1A volts.
12A02MH-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -240mV
the vce saturation(Max) is 240mV @ 20mA, 400mA
the emitter base voltage is kept at 5V
12A02MH-TL-E Applications
There are a lot of ON Semiconductor 12A02MH-TL-E applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
