BC817-40-7-F Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 100mA 1V.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As a result, the part has a transition frequency of 100MHz.This device can take an input voltage of 45V volts before it breaks down.Collector current can be as low as 800mA volts at its maximum.
BC817-40-7-F Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC817-40-7-F Applications
There are a lot of Diodes Incorporated BC817-40-7-F applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
