2SB1424T100R Overview
DC current gain in this device equals 180 @ 100mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at -3A.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -3A.Single BJT transistor contains a transSingle BJT transistorion frequency of 240MHz.Breakdown input voltage is 20V volts.Collector current can be as low as 3A volts at its maximum.
2SB1424T100R Features
the DC current gain for this device is 180 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at -6V
the current rating of this device is -3A
a transition frequency of 240MHz
2SB1424T100R Applications
There are a lot of ROHM Semiconductor 2SB1424T100R applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
