BCX55TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.150MHz is present in the transition frequency.The breakdown input voltage is 60V volts.During maximum operation, collector current can be as low as 1A volts.
BCX55TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX55TA Applications
There are a lot of Diodes Incorporated BCX55TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
