MMSTA13-7-F Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Emitter base voltages of 10V can achieve high levels of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 300mA.In this part, there is a transition frequency of 125MHz.The breakdown input voltage is 30V volts.Collector current can be as low as 300mA volts at its maximum.
MMSTA13-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 300mA
a transition frequency of 125MHz
MMSTA13-7-F Applications
There are a lot of Diodes Incorporated MMSTA13-7-F applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
