FZT956TA Overview
This device has a DC current gain of 100 @ 1A 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -275mV.A VCE saturation (Max) of 370mV @ 300mA, 3A means Ic has reached its maximum value(saturated).For high efficiency, the continuous collector voltage must be kept at -2A.Emitter base voltages of -7V can achieve high levels of efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 110MHz in the part.A breakdown input voltage of 200V volts can be used.Collector current can be as low as 2A volts at its maximum.
FZT956TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
a transition frequency of 110MHz
FZT956TA Applications
There are a lot of Diodes Incorporated FZT956TA applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
