Strain-engineering for green LEDs on silicon
Researchers report on improved 78% internal quantum efficiency (IQE) for green indium gallium nitride (InGaN) light-emitting diode.
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Researchers report on improved 78% internal quantum efficiency (IQE) for green indium gallium nitride (InGaN) light-emitting diode.
read moreSelecting the right power MOSFET for your DC-DC converter can improve efficiency and minimize heating.
read moreEPC Space LLC of Haverhill, MA, USA has launched the EPC7009L16SH, a radiation-hardened gallium nitride gate driver integrated circuit (IC) built on EPC’s proprietary eGaN IC technology.
read moreAs data center computing and HPC advances, the stakes for ensuring reliability are high. Learn how to develop a silicon lifecycle management (SLM) strategy.
read moreA battery management system (BMS) monitors and controls batteries in vehicles such as more-electric aircraft and electric cars.
read moreAt Embedded World 2024, AMD announced two new adaptive SoC chips targeting edge AI and high-load edge computing systems—both of which will be deployed in Subaru's Eyesight ADAS.
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