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BUJ403A/DG,127

BUJ403A/DG,127

BUJ403A/DG,127

WeEn Semiconductors

BUJ403A/DG,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ403A/DG,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature150°C TJ
PackagingTube
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power - Max 100W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 2A
Voltage - Collector Emitter Breakdown (Max) 550V
Current - Collector (Ic) (Max) 6A
RoHS StatusRoHS Compliant
In-Stock:20301 items

Pricing & Ordering

QuantityUnit PriceExt. Price

BUJ403A/DG,127 Product Details

BUJ403A/DG,127 Overview


This device has a DC current gain of 20 @ 500mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 1V @ 400mA, 2A, transistor means Ic has reached transistors maximum value (saturated).A 550V maximal voltage - Collector Emitter Breakdown is present in the device.

BUJ403A/DG,127 Features


the DC current gain for this device is 20 @ 500mA 5V
the vce saturation(Max) is 1V @ 400mA, 2A

BUJ403A/DG,127 Applications


There are a lot of WeEn Semiconductors BUJ403A/DG,127 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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