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JANTX2N4150

JANTX2N4150

JANTX2N4150

Microsemi Corporation

JANTX2N4150 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JANTX2N4150 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/394
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Pin Count3
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power Dissipation1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 5A 5V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 10A
Transition Frequency 15MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 10V
Turn Off Time-Max (toff) 2000ns
Turn On Time-Max (ton) 550ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:620 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.342000$11.342
10$10.700000$107
100$10.094340$1009.434
500$9.522962$4761.481
1000$8.983926$8983.926

JANTX2N4150 Product Details

JANTX2N4150 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 5A 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V allows for a high level of efficiency.As a result, the part has a transition frequency of 15MHz.A maximum collector current of 10A volts is possible.

JANTX2N4150 Features


the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
a transition frequency of 15MHz

JANTX2N4150 Applications


There are a lot of Microsemi Corporation JANTX2N4150 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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