2SCR522MT2L Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1mA 2V.The collector emitter saturation voltage is 120mV, giving you a wide variety of design options.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 200mA in order to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In the part, the transition frequency is 400MHz.This device can take an input voltage of 20V volts before it breaks down.Maximum collector currents can be below 200mA volts.
2SCR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522MT2L Applications
There are a lot of ROHM Semiconductor 2SCR522MT2L applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
