NSS12501UW3T2G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2A 2V DC current gain.The collector emitter saturation voltage is 120mV, which allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 120mV @ 400mA, 4A.Emitter base voltages of 6V can achieve high levels of efficiency.150MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 12V volts.The maximum collector current is 5A volts.
NSS12501UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 120mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS12501UW3T2G Applications
There are a lot of ON Semiconductor NSS12501UW3T2G applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
