NSS20201LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.As it features a collector emitter saturation voltage of 4mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 100mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.The part has a transition frequency of 150MHz.As a result, it can handle voltages as low as 20V volts.During maximum operation, collector current can be as low as 2A volts.
NSS20201LT1G Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of 4mV
the vce saturation(Max) is 100mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS20201LT1G Applications
There are a lot of ON Semiconductor NSS20201LT1G applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
