SQJ504EP-T1_GE3 Description
SQJ504EP-T1_GE3 developed by Vishay Siliconix is a type of MOSFET which is a field-effect transistor that uses the effect of electric field to control the semiconductor (S) through the gate of the metal layer (M) through the oxide layer (O). Its characteristic is to use the gate voltage to control the drain current. Its input terminal is connected to a high level or a low level (usually a high level), and a voltage drop Vce will be generated when the current Ib flows through the MOSFET. The size of this voltage drop is determined by the forward conduction angle of the P-type and N-type diodes. size to decide.
SQJ504EP-T1_GE3 Features
Fast switching speed
Ultra-low gate impedance
Low power consumption
Strong driving ability
Full characterized avalanche voltage and current
SQJ504EP-T1_GE3 Applications
Analog circuits
Digital circuits
