Name: NTJD5121NT2G
Brand: ON Semiconductor
SKU: NTJD5121NT2G
Price: 0.40000 USD
Availability: InStock

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NTJD5121NT2G

Manufacturer part number:NTJD5121NT2G

Manufacturer:ON Semiconductor

Description:NTJD5121NT2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTJD5121NT2G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Max Power Dissipation	250mW
Terminal Form	GULL WING
Base Part Number	NTJD5121N
Pin Count	6
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	22 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	26pF @ 20V
Gate Charge (Qg) (Max) @ Vgs	0.9nC @ 4.5V
Rise Time	34ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	295mA
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTJD5121NT2G Product Details

NTJD5121NT2G Description

The device is designed to provide the lowest possible on-resistance and gate charge in the smallest configuration and has good thermal characteristics in ultra-low shape. Low resistance, small footprint and low shape make the device an ideal choice for battery-powered applications with limited space.