IRF7507TRPBF Description
The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. This advantage, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with an extremely efficient and reliable device for use in a variety of applications. The new Micro8 package covers only half the footprint of the standard SO-8, making it the smallest footprint available in the SOIC outline. This makes Micro8 an ideal device for applications with limited space on printed circuit boards. The ultra-thin shape of the Micro8 (< 1.1 mm) makes it easy to adapt to extremely thin application environments, such as portable electronics and PCMCIA cards.
IRF7507TRPBF Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
IRF7507TRPBF Applications
limited space on printed circuit boards
