FDD3510H Description
These dual N and P channel enhanced mode power MOSFET are manufactured using on Semiconductor's advanced PowerTritch process, which is customized to minimize on-resistance while maintaining excellent switching performance.
FDD3510H Features
Q1: N-Channel
Max rDS(on) = 80m? at VGS = 10V, ID = 4.3A
Max rDS(on) = 88m? at VGS = 6V, ID = 4.1A
Q2: P-Channel
Max rDS(on) = 190m? at VGS = -10V, ID = -2.8A
Max rDS(on) = 224m? at VGS = -4.5V, ID = -2.6A
100% UIL Tested
RoHS Compliant
FDD3510H Applications
Inverter
H-Bridge
