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VS-ETF150Y65N

VS-ETF150Y65N

VS-ETF150Y65N

Vishay Semiconductor Diodes Division

IGBT 650V 150A EMIPAK-2B

SOT-23

VS-ETF150Y65N Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Package / Case Module
Operating Temperature175°C TJ
Published 2016
Series FRED Pt®
Part StatusLast Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation600W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Half Bridge Inverter
Power - Max 600W
Input Standard
Collector Emitter Voltage (VCEO) 2.17V
Max Collector Current 201A
Collector Emitter Breakdown Voltage650V
Vce(on) (Max) @ Vge, Ic 2.17V @ 15V, 150A
IGBT Type NPT
NTC ThermistorYes
RoHS StatusROHS3 Compliant
In-Stock:147 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$71.99000$71.99
10$68.38900$683.89
25$66.58880$1664.72
100$61.63970$6163.97

About VS-ETF150Y65N

The VS-ETF150Y65N from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features IGBT 650V 150A EMIPAK-2B.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the VS-ETF150Y65N, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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