FP15R12W1T4B11BOMA1 Description
FP15R12W1T4B11BOMA1 is a 1200v IGBT-Modules. The FP15R12W1T4B11BOMA1 can be applied in Automotive, Infotainment & cluster, Enterprise systems, Communications equipment, Datacom module, and Personal electronics applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP10R12KE3BOMA1 is in the tray package with 165W Power dissipation.
FP15R12W1T4B11BOMA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 175°C: 28A
Repetitive peak collector current Tp = 1 ms: 30A
Total power dissipation Tc = 25°C: 130W
Gate-emitter peak voltage: ±20V
FP15R12W1T4B11BOMA1 Applications
Automotive
Infotainment & cluster
Communications equipment
Datacom module
Personal electronics
Connected peripherals & printers
