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DF600R12IP4DBOSA1

DF600R12IP4DBOSA1

DF600R12IP4DBOSA1

Infineon Technologies

DF600R12IP4DBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

DF600R12IP4DBOSA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 10
Transistor Element Material SILICON
Operating Temperature-40°C~150°C
Published 2002
Series PrimePack™2
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count8
JESD-30 Code R-XUFM-X8
Qualification StatusNot Qualified
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 3350W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 600A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time370 ns
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 600A
Turn Off Time-Nom (toff) 1350 ns
IGBT Type Trench Field Stop
NTC ThermistorYes
Input Capacitance (Cies) @ Vce 37nF @ 25V
RoHS StatusROHS3 Compliant
Lead Free Contains Lead
In-Stock:71 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$468.650148$468.650148
10$453.239989$4532.39989
25$450.089363$11252.234075
50$446.960639$22348.03195
100$437.767521$43776.7521
500$406.469379$203234.6895

DF600R12IP4DBOSA1 Product Details

DF600R12IP4DBOSA1 Description


DF600R12IP4DBOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. DF600R12IP4DBOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 600A. The DF600R12IP4DBOSA1 has 10 pins and it is available in Module packaging way. DF600R12IP4DBOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



DF600R12IP4DBOSA1 Features


  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 600A

  • Input Capacitance (Cies) @ Vce: 37nF @ 25V

  • Current - Collector Cutoff (Max): 5mA

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Operating Temperature: -40°C~150°C



DF600R12IP4DBOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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