FF300R12KE3HOSA1 Description
FF300R12KE3HOSA1 is a 1200v 62mm C-series module with trench/field stop IGBT3 and Emitter Controlled High-Efficiency diode. The FF300R12KE3HOSA1 can be applied in Automotive, Body electronics & lighting, Communications equipment, Wireless infrastructure, Personal electronics, and Connected peripherals & printers applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FF300R12KE3HOSA1 is in the tray package with 1450W Power dissipation.
FF300R12KE3HOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 440A
Repetitive peak collector current Tp = 1 ms: 600A
Total power dissipation Tc = 25°C, Tvj max = 150: 1450W
Gate-emitter peak voltage: ±20V
FF300R12KE3HOSA1 Applications
Automotive
Body electronics & lighting
Communications equipment
Wireless infrastructure
Personal electronics
Connected peripherals & printers
