FZ1200R33HE3BPSA1 Description
An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.
FZ1200R33HE3BPSA1 Features
? Electrical features
- VCES = 3300 V
- IC nom = 1200 A / ICRM = 2400 A
- Unbeatable robustness
- High DC stability
- High short-circuit capability
- Low switching losses
- Low VCE,sat
- Tvj,op = 150°C
- VCE,sat with positive temperature coefficient
? Mechanical features
- AlSiC base plate for increased thermal cycling capability
- Package with CTI > 600
- IHM B housing
- Isolated base plate
FZ1200R33HE3BPSA1 Applications
? Chopper applications
? Medium-voltage converters
? Motor drives
? Traction drives
? UPS systems
? Wind turbines
