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2SA2195,LF

2SA2195,LF

2SA2195,LF

Toshiba Semiconductor and Storage

2SA2195,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SA2195,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 300mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 33mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 1.7A
RoHS StatusNon-RoHS Compliant
In-Stock:15541 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.438000$0.438
10$0.413208$4.13208
100$0.389818$38.9818
500$0.367753$183.8765
1000$0.346937$346.937

2SA2195,LF Product Details

2SA2195,LF Overview


This device has a DC current gain of 200 @ 300mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 33mA, 1A.This device displays a 50V maximum voltage - Collector Emitter Breakdown.

2SA2195,LF Features


the DC current gain for this device is 200 @ 300mA 2V
the vce saturation(Max) is 200mV @ 33mA, 1A

2SA2195,LF Applications


There are a lot of Toshiba Semiconductor and Storage 2SA2195,LF applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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