2N5551TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 5mA, 50mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Parts of this part have transition frequencies of 100MHz.This device can take an input voltage of 160V volts before it breaks down.In extreme cases, the collector current can be as low as 600mA volts.
2N5551TA Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5551TA Applications
There are a lot of ON Semiconductor 2N5551TA applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
