BCX51TA Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In the part, the transition frequency is 150MHz.The breakdown input voltage is 45V volts.A maximum collector current of 1A volts can be achieved.
BCX51TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCX51TA Applications
There are a lot of Diodes Incorporated BCX51TA applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
