NSV1C201LT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.With a collector emitter saturation voltage of 30mV, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 150mV @ 200mA, 2A.Maintaining the continuous collector voltage at 2A is essential for high efficiency.As a result, the part has a transition frequency of 110MHz.Breakdown input voltage is 100V volts.A maximum collector current of 3A volts is possible.
NSV1C201LT1G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 150mV @ 200mA, 2A
a transition frequency of 110MHz
NSV1C201LT1G Applications
There are a lot of ON Semiconductor NSV1C201LT1G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
