2N5550G Overview
DC current gain in this device equals 60 @ 10mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (600mA).In this part, there is a transition frequency of 100MHz.Maximum collector currents can be below 600mA volts.
2N5550G Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550G Applications
There are a lot of ON Semiconductor 2N5550G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
