2SA1162-GR,LF Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 100mV, it offers maximum design flexibility.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.The breakdown input voltage is 50V volts.Maximum collector currents can be below 150mA volts.
2SA1162-GR,LF Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SA1162-GR,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1162-GR,LF applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
