ZXTN19060CFFTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of 175mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 175mV @ 550mA, 5.5A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As a result, the part has a transition frequency of 130MHz.A breakdown input voltage of 60V volts can be used.Collector current can be as low as 5.5A volts at its maximum.
ZXTN19060CFFTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 175mV
the vce saturation(Max) is 175mV @ 550mA, 5.5A
the emitter base voltage is kept at 7V
a transition frequency of 130MHz
ZXTN19060CFFTA Applications
There are a lot of Diodes Incorporated ZXTN19060CFFTA applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
