SMMBT2907ALT3G Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of -400mV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at -600mA to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.In this part, there is a transition frequency of 200MHz.A breakdown input voltage of 60V volts can be used.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
SMMBT2907ALT3G Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz
SMMBT2907ALT3G Applications
There are a lot of ON Semiconductor SMMBT2907ALT3G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
