PBSS9110T,215 Overview
In this device, the DC current gain is 150 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of 320mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 320mV @ 100mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.100MHz is present in the transition frequency.The breakdown input voltage is 100V volts.The maximum collector current is 1A volts.
PBSS9110T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS9110T,215 Applications
There are a lot of Nexperia USA Inc. PBSS9110T,215 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
