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TSM2305CX RFG

TSM2305CX RFG

TSM2305CX RFG

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) P-Channel Digi-Reel® 55m Ω @ 3.2A, 4.5V ±8V 990pF @ 10V 10nC @ 10V 20V TO-236-3, SC-59, SOT-23-3

SOT-23

TSM2305CX RFG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingDigi-Reel®
Published 2011
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureULTRA-LOW RESISTANCE
HTS Code8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.25W Ta
Operating ModeENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3.2A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Drain Current-Max (Abs) (ID) 3.2A
Drain-source On Resistance-Max 0.052Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 20V
RoHS StatusROHS3 Compliant
In-Stock:6132 items

Pricing & Ordering

QuantityUnit PriceExt. Price

TSM2305CX RFG Product Details

TSM2305CX RFG Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 990pF @ 10V.3.2A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 10A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.

TSM2305CX RFG Features


based on its rated peak drain current 10A.
a 20V drain to source voltage (Vdss)


TSM2305CX RFG Applications


There are a lot of Taiwan Semiconductor Corporation
TSM2305CX RFG applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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