TPW1R306PL,L1Q Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
TPW1R306PL,L1Q Features
(1) High-speed switching
(2) Small gate charge: QSW = 22 nC (typ.)
(3) Small output charge: Qoss = 77.5 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 0.95 m
Ω (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10
µA (max) (VDS = 60 V)
(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I
D = 1.0 mA)
TPW1R306PL,L1Q Overview
N-Channel MOSFET is a type of metal oxide semiconductor field-effect transistor that is categorized under the field-effect transistors (FET). MOSFET transistor operation is based on the capacitor. This type of transistor is also known as an insulated-gate field-effect transistor (IGFET).
