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FQP2N40-F080

FQP2N40-F080

FQP2N40-F080

ON Semiconductor

N-Channel Tube 5.8 Ω @ 900mA, 10V ±30V 150pF @ 25V 5.5nC @ 10V 400V TO-220-3

SOT-23

FQP2N40-F080 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 8 Weeks
Contact PlatingTin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 40W Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Turn On Delay Time7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8 Ω @ 900mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Rise Time30ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 7 ns
Continuous Drain Current (ID) 1.8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 7.2A
DS Breakdown Voltage-Min 400V
Avalanche Energy Rating (Eas) 85 mJ
RoHS StatusROHS3 Compliant
In-Stock:6448 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.20000$1.2
10$1.06700$10.67
100$0.84970$84.97
500$0.66512$332.56

FQP2N40-F080 Product Details

FQP2N40-F080 Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 85 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 150pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1.8A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 7 ns.Peak drain current for this device is 7.2A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 400V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 400V.Using drive voltage (10V) reduces this device's overall power consumption.

FQP2N40-F080 Features


the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 1.8A
the turn-off delay time is 7 ns
based on its rated peak drain current 7.2A.
a 400V drain to source voltage (Vdss)


FQP2N40-F080 Applications


There are a lot of ON Semiconductor
FQP2N40-F080 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

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