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IPB65R660CFDATMA1

IPB65R660CFDATMA1

IPB65R660CFDATMA1

Infineon Technologies

Trans MOSFET N-CH 700V 6A 3-Pin(2+Tab) TO-263

SOT-23

IPB65R660CFDATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 62.5W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 660m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 200μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 615pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage650V
Drain Current-Max (Abs) (ID) 6A
Drain-source On Resistance-Max 0.66Ohm
Pulsed Drain Current-Max (IDM) 17A
Avalanche Energy Rating (Eas) 115 mJ
RoHS StatusRoHS Compliant
Lead Free Contains Lead
In-Stock:5167 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.57000$1.57
500$1.5543$777.15
1000$1.5386$1538.6
1500$1.5229$2284.35
2000$1.5072$3014.4
2500$1.4915$3728.75

About IPB65R660CFDATMA1

The IPB65R660CFDATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 700V 6A 3-Pin(2+Tab) TO-263.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPB65R660CFDATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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