TSM020N04LCR RLG Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 277 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7942pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 27A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 680A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
TSM020N04LCR RLG Features
the avalanche energy rating (Eas) is 277 mJ
based on its rated peak drain current 680A.
a 40V drain to source voltage (Vdss)
TSM020N04LCR RLG Applications
There are a lot of Taiwan Semiconductor Corporation
TSM020N04LCR RLG applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
