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SI7716ADN-T1-GE3

SI7716ADN-T1-GE3

SI7716ADN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 16A 1212-8

SOT-23

SI7716ADN-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 13.5mOhm
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormC BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 3.5W Ta 27.7W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation3.5W
Case Connection DRAIN
Turn On Delay Time15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 846pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Rise Time12ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 32A
DS Breakdown Voltage-Min 30V
Height 1.04mm
Length 3.05mm
Width 3.05mm
Radiation HardeningNo
REACH SVHC Unknown
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5487 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.333756$0.333756
10$0.314864$3.14864
100$0.297042$29.7042
500$0.280228$140.114
1000$0.264366$264.366

About SI7716ADN-T1-GE3

The SI7716ADN-T1-GE3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 16A 1212-8.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI7716ADN-T1-GE3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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