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IRFH5006TRPBF

IRFH5006TRPBF

IRFH5006TRPBF

Infineon Technologies

IRFH5006TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IRFH5006TRPBF Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 4.1MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 156W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation156W
Case Connection DRAIN
Turn On Delay Time9.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 4175pF @ 30V
Current - Continuous Drain (Id) @ 25°C 21A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time13ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 400A
Nominal Vgs 2 V
Height 990.6μm
Length 6.1468mm
Width 5.15mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3452 items

Pricing & Ordering

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IRFH5006TRPBF Product Details

IRFH5006TRPBF Description


The IRFH5006TRPBF is a HEXFET? single N-channel Power MOSFET offering industry-standard pin-out for multi-vendor compatibility. The Infineon IRFH5006TRPBF is suitable for secondary-side synchronous rectification, DC-to-DC brick applications, and boost converters. It is compatible with existing surface-mount techniques. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRFH5006TRPBF is in the PQFN-8 package with 156W power dissipation.



IRFH5006TRPBF Features


  • Low RDS (ON) (<=4.1mR) results in low conduction losses

  • Low thermal resistance to PCB (<=0.8°C/W) enables better thermal dissipation

  • 100% Rg tested for increased reliability

  • Low profile (<=0.9mm) results in increased power density

  • Halogen-free

  • Industrial qualification MSL-1 (increased reliability)



IRFH5006TRPBF Applications


  • Secondary Side Synchronous Rectification

  • Inverters for DC Motors

  • DC-DC Brick Applications

  • Boost Converters

  • Battery-powered applications

  • Power tools

  • DC motor drives

  • Light Electric Vehicles (LEV)

  • SMPS


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