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C3M0065090J

C3M0065090J

C3M0065090J

Cree/Wolfspeed

SiCFET (Silicon Carbide) N-Channel Tube 78mOhm @ 20A, 15V +19V, -8V 660pF @ 600V 30nC @ 15V 900V TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

SOT-23

C3M0065090J Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Number of Pins 7
Supplier Device Package D2PAK-7
Operating Temperature-55°C~150°C TJ
PackagingTube
Series C3M™
Published 2006
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 113W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 2.1V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 600V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 15V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) +19V, -8V
Continuous Drain Current (ID) 35A
Threshold Voltage 2.1V
Drain to Source Resistance 65mOhm
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
In-Stock:532 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$10.85000$10.85

C3M0065090J Product Details

C3M0065090J Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 660pF @ 600V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 65mOhm.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2.1V.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (15V).

C3M0065090J Features


a continuous drain current (ID) of 35A
single MOSFETs transistor is 65mOhm
a threshold voltage of 2.1V
a 900V drain to source voltage (Vdss)


C3M0065090J Applications


There are a lot of Cree/Wolfspeed
C3M0065090J applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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