Name: STP10NK60ZFP
Brand: STMicroelectronics
SKU: STP10NK60ZFP
Price: 3.71000 USD
Availability: InStock

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STP10NK60ZFP

Manufacturer part number:STP10NK60ZFP

Manufacturer:STMicroelectronics

Description:STP10NK60ZFP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STP10NK60ZFP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	750mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	10A
Base Part Number	STP10
Pin Count	3
Number of Elements	1
Power Dissipation-Max	35W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35W
Case Connection	ISOLATED
Turn On Delay Time	20 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	750m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	10A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	10A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Height	9.3mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STP10NK60ZFP Product Details

STP10NK60ZFP Description

STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed with SuperMESHTM technology, which optimizes the strip-based PowerMESHTM layout. Furthermore, this MOSFET is designed to ensure a high degree of dv/dt capability for applications that require a significant reduction in resistance. A lower power dissipation and improved gate charge meet the challenges of today's energy-efficient building code.