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STS8DN3LLH5

STS8DN3LLH5

STS8DN3LLH5

STMicroelectronics

STS8DN3LLH5 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from STMicroelectronics stock available on our website

SOT-23

STS8DN3LLH5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series STripFET™ V
JESD-609 Code e4
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 19MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Max Power Dissipation2.7W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STS8DN
Pin Count8
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation2.7W
Turn On Delay Time4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 724pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Rise Time4.2ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 21.1 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 22V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4571 items

Pricing & Ordering

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STS8DN3LLH5 Product Details

STS8DN3LLH5 Description

This STripFET V power MOSFET technology is one of the latest improvements, specifically tailored to achieve extremely low on-resistance, and is one of the best FOM of its kind.

STS8DN3LLH5 Features


RDS(on) * Qg industry benchmark

Extremely low on-resistance RDS(on)

Very low switching gate charge

High avalanche ruggedness

Low gate drive power losses


STS8DN3LLH5 Application


Switching applications





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