FDC6401N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
FDC6401N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
70MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
20V
Max Power Dissipation
960mW
Terminal Form
GULL WING
Current Rating
3A
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
960mW
Turn On Delay Time
5 ns
Power - Max
700mW
FET Type
2 N-Channel (Dual)
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
70m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
324pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 4.5V
Rise Time
7ns
Fall Time (Typ)
1.6 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
3A
Threshold Voltage
900mV
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
3A
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Standard
Nominal Vgs
900 mV
Height
1.1mm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:9497 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.193314
$9.193314
10
$8.672938
$86.72938
100
$8.182017
$818.2017
500
$7.718884
$3859.442
1000
$7.281966
$7281.966
FDC6401N Product Details
FDC6401N MOSFET Description
The FDC6401N MOSFET has a Drain-Source voltage of 20 V (max) so it is suitable for switching low to medium power loads. It is capsuled within the TSOT-23 6-pin package and is able to operate over -500~150 ℃. It is specified with low input capacitance so it provides credible dynamic performance, too.
FDC6401N MOSFET Features
Low gate charge
RDS(ON) = 95 mΩ @ VGS = 2.5 V
3.0 A, 20 V
High power and current handling capability
RDS(ON) = 70 mΩ @ VGS = 4.5 V
High-performance trench technology for extremely low RDS(on)
FDC6401N MOSFET Applications
Power Management
Battery Protection
DC/DC Converter
Switching
Servo Control
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